Enabling room-temperature ferromagnetism in few-layered MoS2 films via strain engineering
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0281001
Institutions: National Tsing Hua University, Brookhaven National Laboratory, National Synchrotron Light Source II, National Chung Cheng University, National Taiwan University, Institute of Atomic and Molecular Sciences, Academia Sinica, Academia Sinica, Center for Functional Nanomaterials, National Synchrotron Radiation Research Center, National Sun Yat-sen University, Korea University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G357145406, G737270210
OpenAlex ID: W4415873268
