Hybridization in van der Waals Epitaxy of PtSe 2 /h-BN and PtSe 2 /Graphene Heterostructures
Year: 2025
Type: article
Abstract: van der Waals (vdW) heterostructures, which combine bidimensional materials of different properties, enable a range of quantum phenomena. Herein, we present a comparative study between the electronic properties of mono- and bilayer of platinum diselenide (PtSe 2 ) grown on hexagonal boron nitride (h-BN) and graphene substrates using molecular beam epitaxy (MBE). Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), the electronic structure of PtSe 2 /graphene and PtSe 2 /h-BN vdW heterostructures is investigated in a systematic manner. In contrast to PtSe 2 /h-BN, the electronic structure of PtSe 2 /graphene reveals the presence of interlayer hybridization between PtSe 2 and graphene, which is evidenced by minigap openings in the π-band of graphene. Furthermore, our measurements show that the valence band maximum (VBM) of monolayer PtSe 2 is located at the Γ point with different binding energies of about −0.9 and −0.55 eV relative to the Fermi level on h-BN and graphene and substrates, respectively. Our results represent a significant advance in the understanding of electronic hybridization between TMDs and different substrates, and they reaffirm the crucial role of the substrate in any nanoelectronic applications based on van der Waals heterostructures.
Source: ACS Nano
Institutions: Centre National de la Recherche Scientifique, Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies, Université Toulouse III - Paul Sabatier, Institut National des Sciences Appliquées de Toulouse, Laboratoire de Physique et Chimie des Nano-Objets, Université de Toulouse, Thales (France), University of Udine, Synchrotron SOLEIL
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: Defect Engineering of Electronic Properties in 2D Transition Metal Dichalcogenides ternary alloys, Mixed Dimensional Heterostructures under 2D Ferroelectric control, G2659019386, van der Waals heterostructures of 2D materials with on-demand band-structure, Excitons and Phonons in van der Waals materials as quantum sensors of strain, G5256542555, Low-Dimension Materials, G6803667113, Science et Ingénierie à l'Echelle Nano, Graphene layer patterned by diamane/graphane areas towards in-plane sensor device
OpenAlex ID: W4415878614