Year: 2025
Type: article
Abstract: We examine the impact of time-dependent gate voltages on entanglement generation in two capacitively coupled charge qubits, with single-electron injection triggered on demand. The gate voltage modulates the tunnel coupling between the qubits and electronic reservoirs, initiating charge transport into the system. The formation of entangled states arises from the competition between interqubit Coulomb interactions and electron-hopping processes. Particular attention is paid to the temporal structure of the gate pulse, which plays a pivotal role in shaping the entanglement dynamics. By exploring a variety of pulse profiles, we uncover regimes of enhanced entanglement and identify optimal driving conditions. Additionally, we investigate how environmental dephasing deteriorates entanglement formation. Within the framework of the density-matrix formalism, we calculate fidelity, linear entropy, and negativity to identify robust operational windows. These results provide insights into controlling quantum correlations in mesoscopic systems and underscore the importance of error-mitigation strategies in realizing high-performance electronic quantum devices.
Source: Physical Review A
DOI: 10.1103/sjjp-syxx
Authors: E. M. Fernandes, L. Sanz, F. M. Souza
Institution: Universidade Federal de Uberlândia
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Awards: G1288280234, G5906310315
OpenAlex ID: W4415924839