2 kV β -Ga2O3 Schottky diode with HfO2/SiO2 dual-layer field plate and mesa termination
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0287147
Authors: Linhai Zhong, Xin Feng, Weihang Zhang, Xianhe Liu, Hong Zhou, Zhihong Liu, Yue Hao, Jincheng Zhang
Institutions: Xidian University, Guangzhou Institute of Technology
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G3297765819, G8616368566
OpenAlex ID: W4415933145