Light-emitting MOS junction for polarized electroluminescence from quantum rods
Year: 2025
Type: article
Abstract: The anisotropic structure of CdSe/CdS quantum rods (QRs) produces highly linearly polarized emission. Achieving large-area electroluminescence with a high degree of linear polarization (DoLP) from QRs remains challenging. In this work, we propose a light-emitting metal/oxide/semiconductor junction (LE-MOSJ) featuring a greatly simplified ITO/insulator/QRs/Ag architecture, devoid of injection or transport layers, to realize polarized electroluminescence. In this device, a light-responsive azo dye (SD1) serves as an alignment layer on the electrode substrate, creating a highly aligned QR layer. This LE-MOSJ structure enables polarized luminescence from the QRs without requiring removal of the SD1 layer. Photoluminescence and electroluminescence DoLP values of 0.68 and 0.57 are achieved, respectively; the small discrepancy is attributed to the optimized device architecture. This strategy facilitates the fabrication of large-area, aligned QR arrays for stable electroluminescent devices and broadens their applications in optical communication, data encryption, and next-generation displays.
Source: Optics Express
DOI: 10.1364/oe.578240
Authors: Lingfeng Du, Haoyuan Song, Wei Huang, Shaochi Lin, Long Li, Jiayang Lv, Jingyun Dai, Yanmin Guo, Yifan Shen, Kun Wang, Tailiang Guo, Jianbi Le, Min Lin, Rong Chen, Yin Xiao, Chaoxing Wu
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Award: G6037544128
OpenAlex ID: W4415945832