Year: 2025
Type: conference-paper
Abstract: Wide-bandgap semiconductor detectors like silicon carbide (SiC) are promising for fusion and fission environments due to their radiation hardness and thermal/mechanical stability. The 4H-SiC diodes studied, with a 60 µm ”p-n” junction, collect charge carriers generated by neutron reaction products and gammas. The resulting signal provides information on fast neutron energy. Previous studies in mono-energetic fields showed promising results for estimating fast neutron flux, but characterizing the sensor’s response in multi-energetic fields remains challenging. In this work, the calibration of 4H-SiC response functions was performed using Time-of-Flight (ToF) measurements at the Neutron For Science (NFS) facility of GANIL, which allowed the construction of a response matrix. The presented results are promising, providing a response matrix with enough energy channels that can be used for neutron spectrum unfolding purposes.
Source: EPJ Web of Conferences
Institutions: Centre National de la Recherche Scientifique, Université de Toulon, Aix-Marseille Université, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Institut de Recherche sur les Systèmes Nucléaires pour la production d'Energie bas carbone
Language: English
Subfield: Radiation
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: diamond
Funder: Aix-Marseille Université
Award: G7828940515
OpenAlex ID: W4415952902