Scalable nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures
Year: 2025
Type: article
Abstract: Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation – in number, position, and coherence – in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen δ -doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report a positioning precision of ~ 4 nm in depth and 46(1) nm laterally in 280 nm-diameter pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average $${T}_{2}^{Hahn}=98\, \mu {{{\rm{s}}}}$$ T 2 H a h n = 98 μ s ) and higher average photoluminescence compared to NV centers randomly positioned in pillars. Our method can improve the performance of various NV-based devices. In the realm of magnetic sensing, we achieve a 3 × improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors.
Source: Nature Communications
Authors: Sunghoon Kim, Paz London, Daipeng Yang, Lillian B. Hughes, Jeffrey Ahlers, Simon Meynell, William J. Mitchell, Kunal Mukherjee, Ania C. Bleszynski Jayich
Institutions: University of California, Santa Barbara, Stanford University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
Funders: National Science Foundation, U.S. Department of Energy, Gordon and Betty Moore Foundation, National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea, University of California, Santa Barbara, Materials Research Science and Engineering Center, Harvard University, Division of Materials Research, California NanoSystems Institute
Awards: G2045646697, G2505253009, G3070380391, G325663671, Investigating Spatially Resolved Electrical Transport in Strange Metals, G4250104368, G493656753, Graduate Research Fellowship Program (GRFP), G6512159266, G661508814, Materials Research Science and Engineering Center at UCSB, G7437795455, Enabling Quantum Leap: Q-AMASE-i: Quantum Foundry at UCSB
OpenAlex ID: W4415958323
