Work

Modeling of a novel CuAgBeSnSe4/FASnI3-based perovskite solar cell with optimized device parameters

Year: 2025
Type: article
Abstract: ABSTRACT The quaternary multi-chalcogenide compound CuAgBeSnSe 4 (CABTSe) has emerged as a promising light-absorbing material for photovoltaic applications due to its favorable optoelectronic properties. This study presents a novel perovskite solar cell (PSC) architecture incorporating a dual-absorber layer composed of CuAgBeSnSe 4 /FASnI 3 , where CABTSe and FASnI 3 serve as the top and bottom absorbers, respectively. Comprehensive optimization of key device parameters including absorber thickness, back contact work function, operating temperature and total defect density was performed for the proposed configuration. Optimal performance was achieved using absorber layer thicknesses of 0.010 µm for CABTSe and 1 µm for FASnI 3 at an operational temperature of 300 K. The proposed cell demonstrated fill factor (FF) result of 89.00894%, open circuit voltage (V oc ) of 1.22234 V, short-circuit current (J sc ) of 31.76997 mA/cm 2 and maximum power conversion efficiency (PCE) of 34.56552%. The materials used not only demonstrate superior performance but also exhibit lower toxicity compared to conventional lead-based options, thereby promoting a more sustainable method for advancing solar cell technology. The results indicate that the CABTSe/FASnI 3 double-absorber structure presents considerable promise for the progression of next-generation, environmentally sustainable photovoltaic technologies.
Language: English
Open Access status: gold
Estimated APC paid: $1,940
OpenAlex ID: W4415972646
FWCI: 0.693
Cites: 79
Cited by: 3
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