High-performance dynamic random access memory capacitor with an equivalent oxide thickness of 0.31 nm via stepwise cycling in Y-doped Hf 0.5 Zr 0.5 O 2 thin films
Year: 2025
Type: article
Source: Materials Horizons
DOI: 10.1039/d5mh01563d
Authors: Jonghoon Shin, Haengha Seo, Janguk Han, Tae Kyun Kim, Heewon Paik, Haewon Song, Hansub Yoon, Han Sol Park, Kyung Do Kim, Seong Jae Shin, Jae Hee Song, Sanghyup Lee, Seungheon Choi, Dong Hoon Shin, Juneseong Choi, Cheol Seong Hwang
Institution: Seoul National University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: SK Hynix
OpenAlex ID: W4415987977