Work

A Pathway to Low-Shift Red LEDs: Bulk InGaN as the Active Region

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01986

Authors: Zuojian Pan, Zhizhong Chen, Haodong Zhang, Chuhan Deng, Zhiyuan Liu, Haicheng Cao, Han Yang, Fei Huang, Ling Hu, Qi Wang, Guoyi Zhang, Xiaohang Li, Bo Shen

Institutions: Peking University, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, King Abdullah University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, King Abdullah University of Science and Technology, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G2414193896, G2435439527, G2645494615, G3049251379, G5327986571, G6441046274, G8013574667, G8379114735

OpenAlex ID: W4415994431

FWCI: 0.646

Cites: 35

Cited by: 2

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