Work

High-Temperature Photoluminescence Study of MOCVD-Grown β-Ga 2 O 3 : Effects of Doping and Crystallinity

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01835

Authors: Zhongjie Ren, Sangbin Park, Chih-Yang Huang, Moriah Weiss, Gavin M. Latham, Aadil Waseem, Henry Roberts, Xihang Wu, Allen T. Wang, Hao-Chung Kuo, Ray-Hua Horng, Xiuling Li

Institutions: The University of Texas at Austin, National Yang Ming Chiao Tung University, Industrial Technology Research Institute

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: University of Texas at Austin, Linköpings Universitet, National Science and Technology Council, Division of Electrical, Communications and Cyber Systems

Awards: G1182025171, G1464467111, G1750931688, G193668846, G546927978, G6333480307, G829020320, G8377021566, G91258220

OpenAlex ID: W4416003995

FWCI: 0.64

Cites: 56

Cited by: 4

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