Work

Low-Temperature Processed Al-Doped HfO 2 Ferroelectric Memristor with IGZO Exhibiting High Polarization, Endurance, and Retention

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01741

Authors: Gahong Lee, Yumeng Guo, Zhong Pan, Jang-Kun Song, Sangheon Park, Junsin Yi

Institution: Sungkyunkwan University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology, Institute for Information and Communications Technology Promotion

Awards: G3302125862, G825415758

OpenAlex ID: W4416012060

FWCI: 0.231

Cites: 27

Cited by: 1

Related to: