Work

Large spin Seebeck effect in flexible V2Se2O layered altermagnet

Year: 2025

Type: article

Abstract: Recently, two-dimensional (2D) altermagnetic materials have emerged as promising candidates for next-generation energy-efficient spintronic and spin-caloritronic devices. This potential arises from their unique symmetry-breaking characteristics and their intrinsic spin-split electronic band structures. Here, we employ first-principles calculations based on the Boltzmann transport formalism to investigate the spin-dependent thermoelectric transport properties of the layered V 2 Se 2 O system. The V 2 Se 2 O is a direct band gap semiconductor (0.68 eV for monolayer, 0.72 eV for bilayer), exhibiting substantial intrinsic spin splitting (1.14 eV for monolayer, 1.04 eV for bilayer). Furthermore, high Néel temperatures of 600 K (monolayer) and 595 K (bilayer) indicate strong magnetic stability. Notably, we found substantial effective spin Seebeck coefficient values of 1.04 mV/K (monolayer) and 1.16 mV/K (bilayer). These values exceed those reported for other bulk and conventional two-dimensional magnetic and non-magnetic systems, suggesting promising spin caloritronic performance in the material. Additionally, low in-plane rigidity and moderate lateral strain resistance suggest enhanced mechanical flexibility. This combination of strong spin-heat coupling and mechanical flexibility in V 2 Se 2 O suggests its potential for applications in flexible spintronic and spin-caloritronic devices.

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2025.110221

Authors: Ganie Suhail Ahmad, Abdullah, Jisang Hong

Institution: Pukyong National University

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,540

Funders: National Research Foundation of Korea, Ministry of Science and ICT, South Korea