Green (524 nm) InGaN/GaN laser diodes with nano-porous cladding and deep-ridge waveguiding
Year: 2025
Type: article
Abstract: III-Nitride edge-emitting laser diodes operating at green wavelengths ( λ = 524 nm) with nano-porous GaN cladding are demonstrated under pulsed electrical injection. Device performance is enhanced by employing a deeply etched ridge waveguide combined with atomic layer deposition (ALD) sidewall passivation. Compared to shallow-ridge reference lasers, deep-ridge lasers exhibit higher efficiency and lower loss through a combination of improved lateral carrier confinement and improved porous etch selectivity. Internal loss was reduced from 35 cm −1 to 21 cm −1 calculated from variable stripe length analysis, with a similar loss reduction observed in segmented contact absorption curves. Epitaxial improvements are needed to address high threshold current density (22 kA/cm 2 ) and low injection efficiency (16%), but quasi-continuous-wave operation is demonstrated.
Source: Optics Express
DOI: 10.1364/oe.579481
Authors: Emily Trageser, Matthew Wong, Ryan Anderson, Jiaao Zhang, Haojun Zhang, Arturo Juan, Justin Tan, Shuji Nakamura, Steven P. DenBaars
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
OpenAlex ID: W4416082120