A Variational Formulation for Modeling a Phosphorus Doped Silicon Semiconductor Through a Multi‐Well Approach
Year: 2025
Type: article
Abstract: This article develops a variational formulation for modeling a silicon semiconductor through a multi‐well approach utilizing phosphorus atoms as a dopant substance. The results are based on standard tools of calculus of variations and optimization theory. It is worth highlighting, the variational formulation here developed may be used to find an optimal phosphorus density distribution concerning an originally silicon density, in order to maximize the electrical conductivity of such a sample. Finally, in the last section, a numerical example is presented to illustrate the applicability of such results developed in the previous sections.
Source: Advanced Theory and Simulations
Authors: Fabio Botelho, Fabio Silva Botelho
Institution: Universidade Federal de Santa Catarina
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,430
OpenAlex ID: W4416128149