Work

Modeling and Analysis of Temperature-Dependent I–V Characteristics in Ti/6H-SiC Schottky Diodes

Year: 2025

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782625602390

Authors: Abderrahmane Bekaddour, Baya Zebentout, Abdelaziz Rabehi, Schahrazade Tizi, Boudali Akkal, Mohamed Benghanem, Zineb Benamara

Institutions: Université Djilali de Sidi Bel Abbès, Ziane Achour University of Djelfa, Islamic University of Madinah

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4416143485

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Cites: 50

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