High-Performance BGaN/GaN HEMT Design with Si3N4 Passivation for RF and Microwave Applications
Year: 2025
Type: article
Source: Semiconductors
Authors: P. Harikrishnan, B. Mohan
Institution: Kalasalingam Academy of Research and Education
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4416144711