Performance Enhancement of T-gated GaN HEMTs Using Polarization-Graded AlGaN Back Barrier for High-Frequency Applications
Year: 2025
Type: article
Source: Semiconductors
Authors: B. Mohan, J. Charles Pravin, V. Sandeep
Institution: Kalasalingam Academy of Research and Education
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4416144744