Work

Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing

Year: 2025

Type: article

Abstract: We present a novel approach for the optical activation of the negatively-charged silicon vacancy ( V Si − ) center in ion irradiated silicon carbide (SiC) via ns-pulsed laser annealing in the 234–2180 mJ cm − 2 energy density range. The laser annealing process is investigated under 355 nm and 532 nm wavelengths at pulse energy densities below the melting threshold and validated by means of Raman spectroscopy and photoluminescence mapping. The combined effect of ns pulsed laser annealing and subsequent thermal treatment is also assessed. The results offer a promising resource for the development of integrated photonic SiC devices and could be extended to a potentially wide range of applications involving other classes of solid-state quantum emitters.

Source: Scientific Reports

DOI: 10.1038/s41598-025-23259-6

Authors: Gabriele Zanelli, Igor Fontan, Greta Andrini, Emilio Corte, Elena Nieto Hernández, Veronica Varzi, Nour-Hanne Amine, Sofia Sturari, Elisa Redolfi, Valentino Rigato, Matteo Campostrini, Paolo Traina, Federico Picollo, Marco Genovese, Sviatoslav Ditalia Tchernij, Jacopo Forneris

Institutions: Istituto Nazionale di Ricerca Metrologica, University of Turin, Istituto Nazionale di Fisica Nucleare, Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,690

Funders: Compagnia di San Paolo, European Commission, Istituto Nazionale di Fisica Nucleare, Ministero dell'Università e della Ricerca, HORIZON EUROPE Framework Programme, Nuclear Physics, European Metrology Programme for Innovation and Research, HORIZON EUROPE Marie Sklodowska-Curie Actions, NextGenerationEU

Awards: G149940654, G1514638382, G2556164179, G381824997, G394355385, G4275255413, G4827424106, G6293815811, G6948170503, G7034379157, G7802223992, G8244342837, G8491146999, G8795692566

OpenAlex ID: W4416149302

FWCI: 0.68

Cites: 47

Cited by: 3

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