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InSe Ferroelectric Field-Effect Transistor for Simultaneous Perception–Memory–Computation All-in-One Broadband Motion Detection

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Year: 2025
Type: article
Source: ACS Nano
DOI: 10.1021/acsnano.5c16269
Authors: Jing Chen, Ping Li, Junqiang Zhu, Jianguo Hu, Guanhua Dun, Zhen-Hua Wang, Zheng zhang, Hengji Li, Xiao-Ming Wu, Tian-Ling Ren, Lin Han
Institutions: Shandong University, Suzhou City University, Fudan University, State Key Laboratory of ASIC and System, University of Electronic Science and Technology of China, Beijing National Research Center for Information Science and Technology, Tsinghua University
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: Guoqiang Institute, Tsinghua University, National Natural Science Foundation of China, Tsinghua University, Natural Science Foundation of Shandong Province, National Key Research and Development Program of China
Awards: G1898387685, G4082881615, G5457932994, G7328491752, G757842610, G8974554575
OpenAlex ID: W4416181053
FWCI: 1.139
Cites: 63
Cited by: 5
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