Work

Seamless in two dimensions: prospects of lateral heterostructures from integration to quantum devices

Year: 2025

Type: article

Abstract: Lateral heterostructures of two-dimensional (2D) transition metal dichalcogenides feature atomically sharp, covalently stitched 1D interfaces that enable direct band-to-band coupling. This perspective highlights their unique ability to control quasiparticles, excitons, and spins, with implications for optoelectronics, excitonic and valleytronic devices, tunneling field-effect transistors, neuromorphic computing, spintronics, and quantum circuits. It also outlines challenges in scalable synthesis, interface engineering, and 2D–3D integration, charting paths toward future quantum technologies.

Source: npj 2D Materials and Applications

DOI: 10.1038/s41699-025-00613-w