Year: 2026
Type: article
Abstract: The development of uniform GaN micropyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for microlight-emitting diode applications. This work investigates the origins of morphological nonuniformity in micropyramids and microplatelets grown by metal–organic chemical vapor deposition (MOCVD). We observe that a direct one-step growth approach leads to significant growth rate inhomogeneity across arrays. To shed light on this issue, we examine the mechanisms driving nonuniformity and explore process modifications aimed at mitigating these effects. Building on these insights, we propose a controlled multistep growth strategy that combines sequential growth and thermal treatment phases. This approach is demonstrated to enhance the surface morphology and structural regularity. The work contributes to the broader objective of enabling scalable and high-precision GaN microstructure fabrication for next-generation optoelectronic applications.
Source: Crystal Growth & Design
Authors: Changhao Li, Vitaly Z. Zubialevich, Peter J. Parbrook, Brian Corbett, Zhi Li
Institutions: University College Cork, Tyndall National Institute
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Funder: Science Foundation Ireland
OpenAlex ID: W4416248331
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