Dual-Band Techniques in A 79/135 GHz Power Amplifier in 28nm Bulk CMOS
Year: 2025
Type: conference-paper
Abstract: This paper explores mmWave-frequency dualband matching techniques, which are demonstrated in a dualband 3-stage Power Amplifier (PA) that operates in both E-band and D-band. A coupled-resonator concept is applied in order to provide sufficient tuning ratio and consequently allows multiband operation. Active components and passive structures are co-designed to optimize the performance for both bands. The PA has been implemented in 28 nm bulk CMOS and characterized using on-wafer probing. At the operating frequency of 79 GHz, it provides 23 dB power gain, 8.7 dBm output$1-\text{dB}$compression point$(\mathbf{P}_{\mathbf{1 d B}})$,$\mathbf{1 1. 1 d B m}$saturated output power$(\mathbf{P}_{\text{sat }})$with a peak power added efficiency (PAEmax) of 12.4%. At 135 GHz, the measured power gain is 11.5 dB, achieved$\mathrm{P}_{1 \text{dB}}$is 3.9 dBm.$\mathrm{P}_{\text{sat }}$is 9.4 dBm with PAE$_{\text{max }}$of 5.9%. The proposed techniques appear to be cost effective.
Authors: Yiqin Hou, Rainier van Dommele, Evangelos Zaoutis, Dusan Milosevic, Vojkan Vidojkovic
Institution: Eindhoven University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4416249674