Work

High-Power and Low-Noise AlN/GaN/AlGaN-on-Si HEMT Technology for Low-Voltage mm-Wave Monolithically Integrated Mobile Front-End

Year: 2025

Type: conference-paper

Source: European Microwave Integrated Circuits Conference

DOI: 10.23919/eumic65284.2025.11234335

Authors: Yihao Zhuang, Hanchao Li, Qingyun Xie, Siyu Liu, Zhongzhiguang Lu, Pengju Cui, Hanlin Xie, Ameera Nur, Xavier Teo Leng Seah, Stefan Degroote, Marianne Germain, Yuanjin Zheng, Geok Ing Ng

Institutions: Nanyang Technological University, Agency for Science, Technology and Research

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4416250258

FWCI: 5.181

Cites: 17

Cited by: 2

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