Tunneling‐Controlled Fusion of Short‐ and Long‐Term Memory in SiO 2 /HfO 2 ‐Based Neuromorphic Device for Time‐Series Prediction
Year: 2025
Type: article
Abstract: Prediction is a needful action before decision‐making, typically related to the interaction of historical information and current states. It requires computing with information on multiple timescales, meaning intrinsic dynamics in short‐long‐term plasticity. However, current implementations of short‐long‐term memory are still limited by unstable retention in LTM mode and high energy consumption. Here a trap‐assisted tunneling strategy is used in Schottky‐based optical synapse, achieving the tunneling‐switched short‐long‐term memory transformation. Based on the devices, the spike‐timing‐dependent plasticity and spike‐number‐dependent plasticity have been programmed with a low switching energy of 1 pJ that is close to the human brain. By adjustment of light‐pulse inputs, the adaptive short‐to‐long‐term transition can be achieved with a clear mode jump. Furthermore, the formed LTM both in stability (only 0.2 % loss ratio over a span of 50 s) and energy requirement (as low as 3.05 × 10 −11 W) shows desired improvement compared to other devices implementing short‐long‐term memory. By further mapping device parameters to a long short‐term memory network, it allows for the analysis time‐series data and then to make precise long‐term predictions with an error ratio of as low as 4.465 %. This research can offer a hopeful solution to address the precise trend prediction, holding substantial promise for intelligent applications.
Source: Advanced Science
Authors: Chengdong Yang, Lihua Xu, Linlin Su, Yue Wu
Institution: Wuxi University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,730
Award: G83813690
OpenAlex ID: W4416293188