Structure-Optimized Photonic Phase-Change Memory Achieving High Storage Density and Endurance Towards Reconfigurable Telecommunication Systems
Year: 2025
Type: article
Abstract: Next-generation photonic memory, leveraging broad spectral operability and electromagnetic immunity, enables ultrafast data storage with high density, overcoming the physical limitations of silicon-based electronic memory in the post-Moore era. Phase-change materials (PCMs) are particularly promising for photonic memory due to their exceptional optical contrast between amorphous and crystalline states. Furthermore, photonic phase-change memory can be deployed as tunable components (such as optical attenuators and delay lines) within reconfigurable integrated photonic systems for telecommunications and computing. Here, we optimize the thickness of PCM cells to maximize crystalline-state light absorption and enhance transmission contrast. The resulting photonic memory achieves outstanding performance: ultralow-energy programming (0.96 pJ/operation), 9 fJ detection sensitivity, >105 s retention, 6000-cycle endurance, and multi-level storage capacity (209 distinct states). Furthermore, by structuring the PCM into a micro-cylinder array atop a PCM film, we achieve stable transmission contrast through 2 × 106 cycles—far exceeding the durability of single-cell structures—and an 8.69 dB improvement in contrast over film-free micro-cylinder arrays. These advances highlight the critical role of microstructural optimization in enabling high-performance, on-chip photonic memory for future integrated photonic telecommunication and computing systems.
Source: Photonics
Authors: Chen Gao, Zhou Han, Gaofei Wang, Wentao Huang
Institution: Fudan University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,896
OpenAlex ID: W4416298552