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A Q Band MMIC Low Noise Amplifier Design Using 100 nm Gate Length GaAs pHEMT Technology

Year: 2025

Type: conference-paper

Source: European Microwave Conference (EuMC)

DOI: 10.23919/eumc65286.2025.11234999

Authors: Long Jiang, William McGenn, Elle M. Franks, Brian Ellison, Gary A. Fuller, Danielle George

Institution: University of Manchester

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: University of Manchester

OpenAlex ID: W4416366729

FWCI:

Cites: 11

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