Work

High-performance and energy-efficient monolayer GaTe MOSFETs for advanced semiconductor devices

Year: 2025

Type: article

Abstract: Two-dimensional (2D) materials have recently emerged as a pivotal force in the advancement of semiconductor technology, particularly as Moore's law approaches its physical limits. In this study, we systematically investigated the transport properties of monolayer (ML) gallium telluride (GaTe) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and Tunnel Field-Effect Transistors (TFETs) with gate lengths (Lg) ranging from 5.1 to 9.7 nm, applying first-principles quantum transport simulations. Our results reveal that the on-state current (Ion) of 2D armchair-directed GaTe MOSFETs significantly exceeds the high-performance (HP) requirements of the International Technology Roadmap for Semiconductors (ITRS) by several times. Remarkably, the subthreshold swing (SS) values remain consistently below the fundamental limit of 60 mV/dec, even when the gate length is scaled down to sub-5 nm. Impressively, GaTe MOSFETs exhibit an obvious advantage over the representative 2D SnSe2, InSe, and Bi2O2Se MOSFETs, particularly in achieving higher on-state current and lower SS at the similar technological nodes. Additionally, GaTe MOSFETs continue to satisfy the ITRS low-power (LP) application standards. It is also found that n-type 2D GaTe MOSFETs exhibit superior performance compared to that of TFETs. Our findings suggest that 2D GaTe can be a promising candidate in the development of high-performance, energy-efficient, and low-power ultra-scaled electronics devices.

Source: Results in Physics

DOI: 10.1016/j.rinp.2025.108519