Ultrathin boron-doped diamond – surface-wave-plasma synthesis of semi-conductive nanocrystalline boron-doped diamond layers at low temperature
Year: 2025
Type: article
Abstract: Ultrathin boron-doped diamond layers, synthesized at 500 °C, provide a cost-effective, energy-efficient material with moderate semi-conductive properties for advanced functional uses.
Source: Materials Advances
DOI: 10.1039/d5ma00238a
Authors: P. Ashcheulov, M. Davydova, A. Taylor, P. Hubík, A. Kovalenko, J. Kopeček, L. Fekete, Z. Weiss
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,962
OpenAlex ID: W4416399296
