Year: 2025
Type: article
Abstract: The radiation hardness of MAPD-3NK2 photodiodes with deep-buried pixel structures was evaluated under neutron irradiation at fluences ranging from 3.6 × 10 9 to 3.6 × 10 12 n eq /cm². Irradiation induced dark current increase of up to 2060 times, a breakdown voltage shift of (0.37 ± 0.08) V, a photo signal amplitude reduction of (90.1 ± 0.4) %, and a tenfold degradation in amplitude resolution. Partial recovery was observed after 40 days of room-temperature annealing, with dark current decreasing by 35%.Similar performance changes were observed in photodiodes with artificially elevated dark current, indicating that excess current is the primary driver of degradation. This current likely impedes photoelectron detection by occupying pixels or failing to fully quench the avalanche process, thereby reducing photocurrent.
Source: Scientific Reports
Institutions: Azerbaijan University of Architecture and Construction, Radiasiya Problemləri İnstitutu, Khazar University, Jožef Stefan Institute, Jožef Stefan International Postgraduate School, University of Ljubljana, Czech Technical University in Prague, University of West Bohemia in Pilsen, V.E. Lashkaryov Institute of Semiconductor Physics, V.I. Vernadsky Institute of General and Inorganic Chemistry of the National Academy of Sciences of Ukraine
Language: English
Subfield: Nuclear and High Energy Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
OpenAlex ID: W4416407500