Work

Unraveling In‐Plane Crystallographic Anisotropy‐Dependent Memory Performance In Van Der Waals α‐In 2 Se 3 Ferroelectric Semiconductor Field‐Effect Transistors

Year: 2025

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.202517849

Authors: Jong‐Hyun Kim, Seung‐Hwan Kim, Hyeong‐Kyu Jin, Deji Akinwande, Hyun‐Yong Yu

Institutions: Korea University, Chonnam National University, The University of Texas at Austin

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and ICT, South Korea

Award: G3441335597

OpenAlex ID: W4416407865

FWCI: 1.595

Cites: 73

Cited by: 7

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