Work

PdSe 2 /WSe 2 Nanosheet-Based Heterostructures for n-Type Field-Effect Transistors with Enhanced Performance

Year: 2025

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.5c04263

Authors: Arthur Bowman, Kraig Andrews, Mohan De Silva, Amanda V. Haglund, David Mandrus, Pai-Yen Chen, Zhixian Zhou

Institutions: Wayne State University, University of Tennessee at Knoxville, Oak Ridge National Laboratory, University of Illinois Chicago

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Basic Energy Sciences

Awards: Pin down the mechanism of Fermi-level pinning in metal/2D-semiconductor contacts, Collaborative Research: Wavelength-Scalable, Room-Temperature Mid-Infrared Photodetectors Based on Multiphoton-Assisted Tunneling, Collaborative Research: Wavelength-Scalable, Room-Temperature Mid-Infrared Photodetectors Based on Multiphoton-Assisted Tunneling

OpenAlex ID: W4416421252

FWCI: 0.424

Cites: 52

Cited by: 2

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