Work

Analytical Solution to the Gradual Channel Approximation for Metal–Oxide‐Semiconductor Field‐Effect Transistors

Year: 2025

Type: article

Abstract: We revisit the problem of the potential distribution in an inversion channel field effect transistor (metal–oxide‐semiconductor field‐effect transistor) within the gradual channel approximation. We present the hitherto not reported analytical solution for the drop of the source‐drain voltage along the channel.

Source: physica status solidi (b)

DOI: 10.1002/pssb.202500555

Author: Marius Grundmann

Institution: Leipzig University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,650

OpenAlex ID: W4416552599

FWCI:

Cites: 5

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