Ferroelectricity in Sub‐3 nm HZO via a Thin Mo Layer: Interface Engineering for Scalable Memory
Year: 2025
Type: article
Source: physica status solidi (a)
Institution: Korea Advanced Institute of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G3079806777, G4664462927, G5821912763
OpenAlex ID: W4416566026