Year: 2025
Type: article
Abstract: Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.
Source: Advanced Functional Materials
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $5,790
Funders: National Science Foundation, U.S. Department of Energy, Purdue University, University of Texas at Arlington, Center for Integrated Nanotechnologies, Office of Science, National Nuclear Security Administration, Division of Materials Research, Basic Energy Sciences, Laboratory Directed Research and Development, Los Alamos National Laboratory
Awards: G1017065088, G1071216263, G1279347439, G1286236842, G1286251239, G1527848044, G1863003419, G2252123687, G2356915424, G2900453181, G30714459, G3083819904, G3137353516, G325826332, G419881185, G42916606, G4501827968, G498139845, Novel Two Phase Vertically Aligned Nanocomposites Beyond Oxides, G6410514744, G650090426, G6523238283, G6563880843, G70659677, G7977574923, G8437677540, CAREER: Decipher the Mechanism of High-performance Novel Memristors by Phase-field Simulation, G969889393
OpenAlex ID: W4416568006