Relationship between hydrogen diffusion and negative-SET occurred in resistive random access memory with inert electrode
Year: 2025
Type: article
Abstract: In this paper, the cause of the occurrence of the negative-SET process in SiN x -based RRAM is analyzed. As the number of cycles increases, a negative-SET process is observed in Pt/SiN x /Ru devices with positive forming process. By analyzing the test results of current sweep mode and fitting results of current conduction mechanisms, we proposed that the diffusion of hydrogen ions from the switching layer to the electrode is the key cause of the occurrence of the negative-SET process. This study suggests that the role of hydrogen ions in the switching process should be incorporated into the RRAM model, and we should pay more attention to the influence of hydrogen diffusion on the characteristics of VCM, especially on reliability.
Source: Communications Physics
Authors: Yiwei Duan, Xudong Feng, Yuqi Liu, Haifeng Yang, Fei Liu, Yu Qian, Yintang Yang
Institutions: Baoji University of Arts and Sciences, Xidian University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,990
OpenAlex ID: W4416570200