Work

Non‐Perturbative Oxygen Vacancy Mapping via Independently‐Contacted, Reciprocally‐Switching Double‐Layer ECRAM for In‐Memory Computing

Year: 2025

Type: article

Source: Small

DOI: 10.1002/smll.202508271

Authors: Seungmin Han, Hyunjeong Kwak, Jungho Lee, Jeonghoon Son, Seungkun Kim, Seungkun Kim, Jinho Byun, Beomjoo Ham, Hyeongjun Jang, Youngjoon Lee, Changwook Jeong, Seyoung Kim, Seyoung Kim

Institutions: Pohang University of Science and Technology, Ulsan National Institute of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea

Awards: G1088700019, G2366584801, G7197617394

OpenAlex ID: W4416570956

FWCI: 0.225

Cites: 25

Cited by: 1

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