Work

Introducing vacancy defects to induce ferroelectric-like switching in antiferroelectric oxides

Year: 2025

Type: article

Abstract: Ferroelectric-like polarization switching is realised in antiferroelectric oxides through vacancy defect strategy.

Source: Journal of Materials Chemistry C

DOI: 10.1039/d5tc03563e

Authors: Anil Adukkadan, Pooja Punetha, Rajeev Ranjan

Institution: Indian Institute of Science Bangalore

Language: English

Topic: Ferroelectric and Piezoelectric Materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funder: Science and Engineering Research Board

Award: G5384667279

OpenAlex ID: W4416590922

FWCI:

Cites: 58

Cited by:

Related to: