Work

A Ka-Band CMOS Transmit/Receive Amplifier with Embedded Switch for Time-Division Duplex Applications

Year: 2025

Type: article

Abstract: Time-division duplex (TDD) transceivers have found broad utility in millimeter-wave 5G communication, radar and imaging applications. The co-design of the switch and transmit/receive (T/R) amplifiers becomes essential in optimizing the passive loss and chip size. This work presents a Ka-band T/R amplifier with an embedded switch topology. The amplification cores from the TX and RX channels reuse the matching network to the T/R common port, and the full combination of switching and matching structures is enabled within a compact two-winding transformer. Implemented in 40 nm CMOS technology, the proof-of-concept Ka-band T/R amplifier occupies a core chip area of 0.163 mm2. Experimental results show that it achieves a peak gain of 17.2 dB with a −3 dB bandwidth of 22.6–30.2 GHz in TX mode and a peak of 17.1 dB with a −3 dB bandwidth of 23.4–31.0 GHz in RX mode. The compact size and wideband gain response make the proposed T/R amplifier suitable for Ka-band TDD applications.

Source: Micromachines

DOI: 10.3390/mi16121309

Authors: Peng Gu, Jiajun Zhang, Dixian Zhao

Institution: Southeast University

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,534

Funders: National Natural Science Foundation of China, Government of Jiangsu Province, Natural Science Foundation of Jiangsu Province