Work

Ultrawide Bandgap Lateral AlN Schottky Barrier Diodes With Graded AlGaN Contact Layer on Single‐Crystal AlN Substrate

Year: 2025

Type: article

Abstract: Lateral AlN Schottky barrier diodes with a top graded AlGaN contact layer were demonstrated on single‐crystal AlN substrates, where the Ohmic contact showed nearly linear behaviors with a low contact resistivity of 1.54 × 10 −3 Ω cm 2 . The device exhibited good rectifying characteristics with a high on/off ratio of 10 7 –10 9 , an ideality factor of 2.94–1.07, and a Schottky barrier height of 1.24–2.06 eV from 298 to 573 K. The device's inhomogeneous Schottky barrier distribution was also comprehensively studied. The device breakdown voltage exceeded 640 V with a high average breakdown electric field of 129 V μm − 1 .

Source: physica status solidi (a)

DOI: 10.1002/pssa.202500568

Authors: Junzhe Xie, Bingcheng Da, Dawei Wang, Dinusha Herath Mudiyanselage, Ziyi He, Houqiang Fu

Institution: Arizona State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze