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Strain control of the electronic structure in WS 2 homobilayers with 0° and 60° stacking angles

Year: 2025
Type: article
Abstract: 2D TMDs combine attractive semiconductor properties with exceptionally strong light–matter interaction. In a bilayer, the excitonic resonances shift upon the application of uniaxial in-plane strain by a stacking-dependent amount.
Source: Nanoscale
DOI: 10.1039/d5nr01872b
Authors: Valentino Jadriško, Irantzu Landa-Garcia, Dino Novko, Borna Radatović, Qianjie Lei, Nataša Vujičić, Christoph Gadermaier, Andres Castellanos-Gomez, Yong Xie
Institutions: Politecnico di Milano, Institute of Physics, University of Chemistry and Technology, Prague, Xidian University, Consejo Superior de Investigaciones Científicas, Instituto de Ciencia de Materiales de Madrid
Language: English
Open Access status: hybrid
Funders: European Commission, Ministerio de Ciencia e Innovación, Horizon 2020 Framework Programme, European Regional Development Fund, Agencia Estatal de Investigación, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, H2020 European Research Council
Awards: G1175115578, G154073810, G1855990336, G2008309395, G2171898597, G2262748287, G2309174360, G24120701, G252646220, G2601397997, G2643395488, G2660406951, G2933350706, G294895050, G300979063, G3471339378, G3480869486, G3681454997, G4042783231, G410571670, G4206069288, G425668148, G430777504, G434337789, G4490468271, G451917667, G5080475149, G5195188938, G523076202, G5421974903, Developing optoelectronics in two-dimensional semiconductors, G5539308778, G5744929738, G5755570853, G5805502524, G594019444, G5967599077, G6033112984, G6355219092, G7084143925, G711120973, G7875408134, G8375075789, G99296377
OpenAlex ID: W4416619615
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