Analysis for roughness-generation mechanism in Ru etching using Cl2/O2-based plasma for advanced interconnect
Year: 2025
Type: article
DOI: 10.1116/6.0004927
Institutions: Hitachi (Japan), Hitachi High-Tech (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Hitachi
OpenAlex ID: W4416633609
