Work

Temperature modeling and pulse shaping strategies for energy optimization in 2T-SOT-MRAM

Year: 2025

Type: article

Abstract: A fully 3D model coupling spin, charge, magnetization, and temperature dynamics has been employed to study the two-terminal spin-orbit-torque magnetoresitive random-access memory (2T-SOT-MRAM). To account for heating from tunneling electrons, we applied an asymmetric heating model near the tunnel barrier, revealing that symmetric model can underestimate free layer temperature increase by over 25%. We further employ the model to simulate switching of the 2T-SOT-MRAM under different voltage pulse shapes and show that the pulse-shaping strategies can not only reduce power consumption by more than 30%, but also significantly reduce peak temperature of the device during writing.

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2025.109284

Authors: Tomáš Hadámek, Viktor Sverdlov

Institution: TU Wien

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,410

Funders: Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung, Christian Doppler Forschungsgesellschaft, Technische Universität Wien Bibliothek