Work

Solution-processed high- κ SrTiO 3 with high breakdown field for gate dielectrics

Year: 2025

Type: article

Source: Journal of Materials Chemistry C

DOI: 10.1039/d5tc03765d

Authors: Dinghao Ma, Zihao Chen, Haowei Li, Boxi Ye, Liting Liu, Han He, Shiwei Sun, Nanting Luo, Hao Huang, Daocheng Pan, Bingsuo Zou

Institutions: Guangxi University, Hubei University, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Guangxi Zhuang Autonomous Region, National Natural Science Foundation of China

Awards: G5719146773, G6651904779, G906724973

OpenAlex ID: W4416673968

FWCI: 0.231

Cites: 38

Cited by: 1

Related to: