Work

2D Weak Localization in ZnO Nanostripes

Year: 2025

Type: article

Abstract: We fabricated oxygen-deficient ZnO thin films on sapphire substrates via pulsed laser deposition and precisely patterned them into 70 nm wide stripes using photolithography and focused ion beam nanomachining. This configuration allowed us to perform a detailed quantitative analysis of the weak localization (WL) anisotropy effects in a low-dimensional system. By aligning the magnetic field either parallel or perpendicular to the stripe plane in a maximum Lorentz force configuration, we uncovered a pronounced anisotropic magnetoresistance at low temperatures. Angle-dependent magnetoresistance measurements further elucidated this anisotropy, which is well described by the combination of Altshuler-Aronov’s 2D WL theory and the two-band model for positive magnetoresistance.

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01693