Work

Design of broadband optical gain in GaSb-based heterostructures with asymmetric quantum wells

Year: 2025

Type: article

Abstract: A design strategy for achieving broadband optical gain in GaSb-based semiconductor heterostructures operating beyond 2 µm is presented. By employing asymmetric GaInSb/AlGaAsSb quantum wells (QWs) of varying thicknesses, a flat and wide gain spectrum is demonstrated. The approach leverages carrier density and transition energy tuning across QWs to access various energy levels at specific current densities. Simulations using "Harold" self-consistent environment predict a full-width at half-maximum (FWHM) gain bandwidth exceeding 340 nm for a structure comprising one 7 nm and three 13 nm-thick QWs. The modelling parameters were validated against experimental data, ensuring a robust framework for gain engineering in broadband amplifiers and superluminescent diodes for mid-infrared applications.

Source: Optics Express

DOI: 10.1364/oe.575782

Authors: Ifte Khairul Alam Bhuiyan, Joonas Hilska, Markus Peil, Jukka Viheriälä, Mircea Guina

Institution: Tampere University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funders: Academy of Finland, Horizon 2020 Framework Programme, HORIZON EUROPE Framework Programme