Work

Theoretical Analysis of a pn‐Diode on AIN with Distributed Polarization Doping

Year: 2025

Type: article

Abstract: Distributed polarization doping (DPD) represents a promising pathway toward high aluminum () mole fraction aluminum gallium nitride () electronic devices. In order to design more complex high mole fraction devices such as transistors, accurate device modeling is a valuable tool. This article provides a theoretical analysis including special peculiarities of DPD heterojunction devices, material parameters appropriate for high mole fraction materials, and geometry, e.g., rotational symmetry. Moreover, the article studies the temperature‐dependent mobility of DPD devices and addresses the breakdown capabilities of high mole fraction materials.

Source: physica status solidi (a)

DOI: 10.1002/pssa.202500629

Authors: Samuel Faber, Bernd Witzigmann

Institution: Friedrich-Alexander-Universität Erlangen-Nürnberg

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,780

Funders: Deutsche Forschungsgemeinschaft, Technische Universität Braunschweig