Work

Quantum Transport Simulation and Logic Gate Application of n-Type Sub-10 nm Monolayer MoSi 2 N 4 MOSFETs †

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01786

Authors: Jie Li, Shuo Wang, Xiang Li, Guozheng Nie, Zhenhua Wu, Yu-Qing Zhao, Yee Sin Ang

Institutions: Hunan University of Science and Technology, Zhejiang University, Singapore University of Technology and Design

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Hunan Province, Hunan University of Science and Technology

Awards: G4524652049, G5113719955, G5448391960

OpenAlex ID: W4416701483

FWCI: 0.416

Cites: 53

Cited by: 2

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