A 31-Inch AMOLED Display Integrating a Gate Driver with Metal Oxide TFTs
Year: 2025
Type: article
Abstract: Gate driver-on-array (GOA) circuits employing amorphous indium-gallium-zinc oxide (IGZO)-based thin-film transistors (TFTs) have been successfully utilized to generate the driving signals for the commercialization of active-matrix organic light-emitting diode (AMOLED) displays. The depletion-mode TFTs in GOA circuits can be completely turned off by the introduction of series-connected, two-transistor, dual low-voltage-level power signals. Simulation results demonstrate that a GOA exhibits high process stability with a threshold voltage margin from -5 V to +5 V. Furthermore, the GOA output characterization and mobility compensation effect are evaluated by the integration of the GOA and pixel in a 31-inch 4K AMOLED display. Experimental results demonstrate that full-swing driving pulses can be obtained with the GOA. Finally, the stripe mura in the display caused by mobility variation can be successfully eliminated by the introduction of GOA circuits.
Source: Micromachines
DOI: 10.3390/mi16121325
Authors: Xianjie Zhou, Qiming Zeng, Li Guo, Yuyi Cheng, Fei Yu, Guo Tian, Xiaopeng Lu, Zhiqiang Zhang, Baixiang Han, Yan Xue
Institution: Shenzhen Polytechnic University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
OpenAlex ID: W4416723959