Year: 2025
Type: article
Abstract: A Fabry–Pérot enhanced resistive random‐access memory (FP‐RRAM) comprising an Ag/BFO/ITO stack integrated with a distributed Bragg reflector (DBR) is demonstrated, enabling dual electrical and optical memory readout. Well‐separated cavity resonances allow reliable optical discrimination between high‐ and low‐resistance states. Cross‐sectional transmission electron microscopy (TEM) coupled with energy‐dispersive X‐ray spectroscopy (EDS) mapping reveals spatially localized Ag migration and oxygen‐vacancy filament formation, collectively modulating the effective permittivity of the BFO layer. Momentum‐resolved reflectance measurements and finite‐difference time‐domain (FDTD) simulations further validate that resistive switching tunes the cavity eigenmode through changes in the effective refractive index. Combined electrical and optical characterization exhibits pronounced hysteresis and bistability, with robust retention and synchronized modulation observed up to a 50‐ms timescale. By employing the Maxwell–Garnett effective medium approximation, ionic reconfiguration with optical response, revealing sharp increases in both Ag and oxygen‐vacancy volume fractions at the set threshold, with Ag migration dominating the switching kinetics is quantitatively correlated. This integrated structural, optical, and theoretical analysis directly links nanoscale filament dynamics with macroscopic photonic modulations. Additionally, the FP‐RRAM demonstrates linear optical weight updates with enhanced state resolution for precise synaptic modulation, leading to higher recognition accuracy than purely electrical programming. These results establish FP‐RRAM as a reliable, electrically programmable, and optically addressable memory platform, offering a promising avenue for neuromorphic and photonic computing applications.
Source: Advanced Functional Materials
Authors: Yung‐Chi Yao, Chia‐Jung Lee, Yong‐Jun Chen, Zi‐Xuan Qiu, Chia‐Jui Lin, Hongseok Oh, Ricky W. Chuang, Ya‐Ju Lee
Institutions: National Cheng Kung University, Soongsil University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Awards: G222382802, Color-Filter-Free Image Sensor Using Cspbbr3 Quantum-Dot-Based Tamm Plasmon Photodetector for Photonic Synapse Facial Recognition, G4907376760, G4930258954, G514290385, Room-Temperature Tamm-Plasmon Exciton-Polaritons Condensation with Single-Monolayered Perovskite Quantum Dots and Its Application of Ultrafast All-Optical Transistor, G7456581020, Fundamental Research Core Facility of Ncku( Iv ), G8561419378, G8689356752
OpenAlex ID: W4416779329